Gallium phosphide - Wikipedia
Gallium phosphide (GaP), a phosphide of gallium, is a compound semiconductor material with an indirect band gap of 2.24 eV at room temperature. Impure polycrystalline material has the …
Integrated gallium phosphide nonlinear photonics - Nature
2019年11月25日 · Here, we introduce GaP-on-insulator as a platform for nonlinear photonics, exploiting a direct wafer-bonding approach to realize integrated waveguides with 1.2 dB cm −1 …
Gallium Phosphide - an overview | ScienceDirect Topics
Gallium phosphide (GaP), similar to AlP, crystallizes in the thermodynamically stable cubic ZB structure (a = 5.45 Å), surprisingly with a nearly identical lattice parameter as AlP. Under …
Gallium phosphide optical metasurfaces for visible light
2020年11月26日 · Gallium phosphide (GaP) is a semiconductor material that offers great potential for developing metasurface-based devices in the visible domain. As a single crystal, it has an …
A review of gallium phosphide nanophotonics towards …
Gallium phosphide (GaP) has been increasingly prioritized, fueled by the enormous demands in visible light applications such as biomedical and quantum technologies. GaP has garnered …
GALLIUM PHOSPHIDE (GaP) - SpringerLink
Gallium phosphide (GaP) is commercially one of the most important III–V semiconductors because of its application to electroluminescent devices. GaP is an indirect-band-gap …
Ultrafast sub–30-fs all-optical switching based on gallium phosphide
2019年6月14日 · Gallium phosphide (GaP) is one of the few available materials with strong optical nonlinearity and negligible losses in the visible (λ > 450 nm) and near-infrared regime. In this …
Gallium phosphide is a semiconductor of the III-V type, with the same type of crystal structure as silicon, but with gallium and phosphorus atoms on adjacent sites. Because of its detailed band …
Gallium Phosphide - SpringerLink
2019年4月8日 · Gallium phosphide is a semiconductor of the III–V type, with the same type of crystal structure as silicon, but with gallium and phosphorus atoms on adjacent sites. Because …
Here, we introduce GaP-on-insulator as a platform for nonlinear photonics, exploiting a direct wafer-bonding approach to realize integrated waveguides with 1.2 dB cm−1 loss in the...