Electrical measurements on vertical GaN MOSFETs revealed a current density of 330 mA mm -1 at a drain bias of 5 V, and a ...

Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN ...

Leading players in the global GaN semiconductor devices market include: Bridgelux, Inc. Cree, Inc. GaN Systems Inc. NexGen Power Systems, Inc. Qorvo, Inc. Toyoda Gosei Co., Ltd.

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Panic? That's not your style. You recall your secret weapon -- your power bank. With one swift, well-practiced move, you reach into your bag, pull out your trusty power bank, and hook it up to ...

Another way is building 3D chips, which squeeze more transistors into the same area ... of the same chip area and significantly lower the power consumption compared to standard CMOS electronics.

Infineon paid Cree a termination fee of $12.5 million. Instead, in March 2018, Wolfspeed acquired Infineon’s RF Power business for about $430 million. The Infineon unit focused on RF discrete ...

(Image: NorthEast RF) Return loss and mismatch loss are also important parameters in the VSWR domain. Return loss is the difference between the forward power and the reflected power, while mismatch ...

It offers microcontrollers (MCUs) and microprocessors; amplifiers, audio and video, data converters, power ... transistor arrays, and variable gain amplifiers, as well as RF amplifiers ...