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EurekAlert!
2y
CMOS兼容的晶圆级硅锥阵列局域化细丝形成以实现极佳阻变存储器均一性
SSA结构诱导器件在尖端区域形成准单根或少量的导电细丝,显著改善了器件转变参数的均一性。 该研究所提出的SSA方法具备低成本、CMOS兼容且纳米 ...
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