FMI forecasts indicate that the global insulated gate bipolar transistors (IGBT) market size is set to reach a valuation of USD 6.7 billion in 2023. This growth trajectory is primarily attributed to ...

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In this work, the shear strength of the Al-bonded wire-Al metallization layer bond interface of an insulated-gate bipolar transistor (IGBT) module after different numbers of power cycles was measured ...

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组成的复合全控型电压驱动式功率半导体器件(图2)，IGBT是Insulated Gate Bipolar Transistor的缩写形式，是绝缘栅双极型晶体管。与以前的各种电力电子器件相比，IGBT具有以下特点： ①高输入阻抗，可采用通用低成本的驱动线路； ②高速开关特性，导通状态低损耗。

Mitsubishi announced that it has begun shipping samples of two S1-Series high-voltage IGBT modules rated at 1.7 Continue Reading ...