Figure 1: The epilayer structure of an InGaN green laser diode on a c-sapphire substrate. The key to the success of Miyoshi et. al. was their ability to improve the quality of the InGaN active layers.

They used a sapphire substrate with a specific crystalline plane exposed to the surface, providing a template on which nanotubes can be grown. Gases containing tungsten and sulfur were fed to the ...

More information: Huabin Yu et al, Vertically Integrated Self‐Monitoring AlGaN‐Based Deep Ultraviolet Micro‐LED Array with ...

(b) THz waveforms generated from mono- and multi-layer MoS2. The back curve shows the THz signal from the bare sapphire substrate, indicating no detectable THz radiation. (c) Schematic diagram of ...