Guerrilla RF has released the first in a new class of GaN-on-SiC HEMT power amplifiers being developed by the company.

Guerrilla RF, Inc. (OTCQX: GUER) announces the formal release of the GRF0020D and GRF0030D, the first in a new class of GaN ...

These are: 1. a summing amplifier of the voltage feedback type having a 1-per-cent accuracy of summation; and 2. a power amplifier for servomotor operation. This paper describes the design and ...

Advances in RF power delivery, including RF pulsing and direct match-generator synchronization, are critical to overcoming these challenges and pushing chip manufacturing into sub-nanometer scales.

Infineon paid Cree a termination fee of $12.5 million. Instead, in March 2018, Wolfspeed acquired Infineon’s RF Power business for about $430 million. The Infineon unit focused on RF discrete ...

Advances in RF power delivery, including RF pulsing and direct match-generator synchronization, are critical to overcoming these challenges and pushing chip manufacturing into sub-nanometer scales.

First in a Series of New GaN on SiC HEMT Dice Provide up to 50W of Power for Custom MMICs According to market research from Yole Group, the RF GaN device market is expected to grow from $1.3B in ...

First of all, there can be some confusion between integrated amplifiers (one that combines both a preamp and power amp) and stereo receivers (which is basically an integrated amplifier with an AM ...

(Image: NorthEast RF) Return loss and mismatch loss are also important parameters in the VSWR domain. Return loss is the difference between the forward power and the reflected power, while mismatch ...

In a world grappling with a multitude of health threats—ranging from fast-spreading viruses to chronic diseases and drug-resistant bacteria—the need for quick, reliable, and easy-to-use home ...