在最先进的二维 DRAM 中，将 EUV 光刻技术与传统的 ArF SADP 和 SAQP 工艺相比较。 三星正在开发一种新的单元架构，旨在实现 4F2（F 为最小特征尺寸）的面积效率。 这种设计采用了垂直沟道晶体管，并将目前的 6F2 电池转换为 4F2。 不过，它需要新材料（包括铁电 ...

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HBM4 race heats up among memory giants: customization and DRAM scaling at the crux Amanda Liang, Taipei; Levi Li, DIGITIMES Asia Thursday 26 December 2024 0 Credit: DIGITIMES ...

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