Abstract: In this work, the ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) capacitor with a novel anti-ferroelectric (AFE) ZrO2 seed layer is thoroughly investigated for memory applications, by comparing with ...

National Laboratory of Solid-State Microstructures, School of Electronic Science and Engineering, Collaborative Innovation Center of Advanced Microstructures, Nanjing University, Nanjing 210093, P. R.

The authors find that the electric dipoles of a hybrid molecular material exhibit two kinds of intrinsic noncollinear textures, corresponding to its ferroelectric and antiferroelectric states.

Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, Republic of Korea ...