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EurekAlert!
2y
CMOS兼容的晶圆级硅锥阵列局域化细丝形成以实现极佳阻变存储器均一性
SSA结构诱导器件在尖端区域形成准单根或少量的导电细丝,显著改善了器件转变参数的均一性。 该研究所提出的SSA方法具备低成本、CMOS兼容且纳米 ...
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3mon
imec硅基量子位元创下最低电荷噪声,成功导入12英寸CMOS制程
De Greve进一部指出,了解这些电荷噪声的来源将能引导我们进一步优化量子点结构。具备低噪声的量子位元环境及运用CMOS制造技术所展示的均匀度 ...
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