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MIT researchers say nanoscale 3D transistors made from ultrathin semiconductor materials promise more efficient electronics; quantum mechanics offers a path beyond silicon limits
This structure, consisting of vertical nanowires just a few nanometers wide, allows these transistors to operate at much lower voltages while maintaining performance on par with state-of-the-art s ...
EurekAlert!10mon
Development history of and new trends in MOSFETs with differing transistor structures and scaling stages (IMAGE)
Core MOSFETs are developed from planar transistors and FinFETs to the latest Stacked NanoSheet/NanoWire Gate-All-Around FETs (GAAFETs), and now to the cutting-edge vertical transistor 3D stacking ...
Semiconductor Engineering5y
Manufacturing Bits: Dec. 23
At the recent IEEE International Electron Devices Meeting (IEDM), Cornell University and Hosei University presented a paper on a gallium oxide vertical transistor with a record breakdown voltage.