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宽禁带材料推动未来技术的半导体研究与制造
Nexperia公司已计划投资2亿美元 (约1.84亿欧元)开发下一代宽禁带半导体 (WBG),包括碳化硅 (SiC)和氮化镓 (GaN)。此外,该公司将在其汉堡工厂建立生产基础设施,并扩大硅 (Si)二极管和晶体管的晶圆厂产能。
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