“Consequently, each activation induces a thermal cycle attributed to these power losses ... and the IGBT may fail in just 5 years, leading to PV inverter failure in just 3.8 years ...

FMI forecasts indicate that the global insulated gate bipolar transistors (IGBT) market size is set to reach a valuation of ...

Mitsubishi Electric Corporation (TOKYO: 6503) announced today that it will begin shipping samples of two new S1-Series High ...

(NYSE: VSH) has announced the launch of two innovative IGBT and MOSFET drivers ... coupled to an integrated circuit featuring ...

an IGBT module for the inverter, and power devices for the DC/DC converter and OBC. Renesas is set to demonstrate the new ...

In addition, the use of an IGBT element with a Carrier Stored Trench Gate Bipolar Transistor (CSTBT) structure helps reduce both power loss and thermal resistance for more efficient inverters.