Insulated gate bipolar transistors (IGBTs) are semiconductors that combine a high voltage and high current bipolar junction transistor (BJT) with a low power and fast switching metal-oxide ...

As a result, the new IGBTs enable designers to develop energy-efficient motor-driven subsystems as well as inverter and heater circuits that comply with strict automotive reliability and safety ...

ROHM Semiconductor today announced new automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading[1] low loss characteristics with high short-circuit resistance.

12, 2024 /PRNewswire/ -- ROHM Co., Ltd. has developed fourth-generation 1200V IGBTs that are automotive-grade and qualified for AEC-Q101, combining class-leading* low-loss characteristics with high ...

Santa Clara, CA and Kyoto, Japan, Nov. 07, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading[1] ...

Ideal Power Inc announced a joint development agreement for an SSCB product with a leading Asian circuit protection equipment manufacturer targeting completion in 2nd quarter of 2025 and potential for ...

Santa Clara, CA and Kyoto, Japan, Nov. 07, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new automotive-grade AEC-Q101 qualified 4th Generation 1200V IGBTs that combine class-leading[1] ...